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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesCIPOS MICROTape & Reel (TR),Cut Tape (CT)23-SOPSurface MountIM241, CIPOS™-40°C ~ 150°C (TJ)
Infineon TechnologiesCIPOS MICROTube23-DIPThrough HoleIM241, CIPOS™-40°C ~ 150°C (TJ)
Infineon TechnologiesTRENCH 40<-<100VTape & Reel (TR)----
Infineon TechnologiesTRENCH >=100VTape & Reel (TR)----
Infineon TechnologiesTRENCH 40<-<100VTape & Reel (TR)----
Infineon TechnologiesTRENCH 40<-<100VTube----
Infineon TechnologiesIGBT TRENCH 100VTube----
QualcommIPQ-5312-0-MRQFN251-MT-03-0.Tray----
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