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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
QualcommIPQ-5312-0-MRQFN251-TR-03-0.Tape & Reel (TR)----
Infineon TechnologiesTRENCH 40<-<100VTape & Reel (TR)----
Infineon TechnologiesTRENCH 40<-<100VTape & Reel (TR)----
Infineon TechnologiesTRENCH 40<-<100VTape & Reel (TR)----
Infineon TechnologiesTRENCH 40<-<100VTape & Reel (TR)----
Infineon TechnologiesTRENCH <= 40VTape & Reel (TR)----
Infineon TechnologiesTRENCH >=100VTube----
Infineon TechnologiesIGBT 600V 55A SUPER-220TubeSUPER-220™ (TO-273AA)Through Hole--
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