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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() RGTV00TS65GC11 $2.41 | Rohm Semiconductor | IGBT TRENCH FS 650V 95A TO-247N | Tube | TO-247N | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() RGTV00TS65GC13 $5.54 | Rohm Semiconductor | IGBT TRENCH FS 650V 95A TO-247GE | Tube | TO-247GE | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() RGTV60TK65DGVC11 $6.42 | Rohm Semiconductor | IGBT TRENCH FS 650V 33A TO-3PFM | Tube | TO-3PFM | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() RGTV60TK65GVC11 $5.57 | Rohm Semiconductor | IGBT TRENCH FS 650V 33A TO-3PFM | Tube | TO-3PFM | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() RGTV60TS65DGC11 $5.89 | Rohm Semiconductor | IGBT TRENCH FS 650V 60A TO-247N | Tube | TO-247N | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() RGTV60TS65DGC13 $5.59 | Rohm Semiconductor | IGBT TRENCH FS 650V 60A TO-247GE | Tube | TO-247GE | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() RGTV60TS65GC11 $2.67 | Rohm Semiconductor | IGBT TRENCH FS 650V 60A TO-247N | Tube | TO-247N | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() RGTV60TS65GC13 $4.71 | Rohm Semiconductor | IGBT TRENCH FS 650V 60A TO-247GE | Tube | TO-247GE | Through Hole | - | -40°C ~ 175°C (TJ) |

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