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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 STGHU30M65DF2AG $3.89 | STMicroelectronics | IGBT TRENCH FS 650V 84A HU3PAK | Tape & Reel (TR),Cut Tape (CT) | HU3PAK | Surface Mount | M | -55°C ~ 175°C (TJ) |
 STGI25N36LZAG $0.78 | STMicroelectronics | IGBT 350V 25A TO-262 | Bulk | TO-262 (I2PAK) | Through Hole | - | -55°C ~ 175°C (TJ) |
 STGP100N30 $5.96 | STMicroelectronics | IGBT 330V 90A TO-220 | Tube | TO-220 | Through Hole | STripFET™ | -55°C ~ 150°C (TJ) |
STGP10H60DF $1.96 | STMicroelectronics | IGBT TRENCH FS 600V 20A TO-220 | Tube | TO-220 | Through Hole | - | -55°C ~ 175°C (TJ) |
STGP10M65DF2 $1.68 | STMicroelectronics | IGBT TRENCH FS 650V 20A TO-220 | Tube | TO-220 | Through Hole | - | -55°C ~ 175°C (TJ) |
| STMicroelectronics | IGBT 440V 20A TO-220 | Tube | TO-220 | Through Hole | PowerMESH™ | -65°C ~ 175°C (TJ) | |
STGP10NB60S $2.64 | STMicroelectronics | IGBT 600V 29A TO-220 | Tube | TO-220 | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
STGP10NB60SD $2.64 | STMicroelectronics | IGBT 600V 29A TO-220 | Tube | TO-220 | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
