Product categories

Filter by price :
IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Screen Default Ranking Price By Date
Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
STMicroelectronicsIGBT 600V 35A TO-220TubeTO-220Through HolePowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT 600V 40A TO-220TubeTO-220Through HolePowerMESH™-
STMicroelectronicsIGBT 600V 40A TO-220TubeTO-220Through HolePowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT 600V 40A TO-220TubeTO-220Through HolePowerMESH™-65°C ~ 150°C (TJ)
STMicroelectronicsIGBT 600V 40A TO-220TubeTO-220Through HolePowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT TRENCH FS 600V 40A TO-220TubeTO-220Through Hole--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 650V 40A TO-220BulkTO-220Through Hole--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 650V 40A TO-220TubeTO-220Through HoleHB2-55°C ~ 175°C (TJ)
Add ComparisonUp to 4 can be added