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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
STMicroelectronicsIGBT 600V 23A TO-220FPTubeTO-220FPThrough HolePowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT 600V 20A TO-220TubeTO-220Through HolePowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT 600V 20A TO-220TubeTO-220Through HolePowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT 600V 20A TO-220TubeTO-220Through HolePowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT 600V 20A TO-220TubeTO-220Through HolePowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT 600V 21A TO-220TubeTO-220Through HolePowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT 600V 30A TO-220TubeTO-220Through HolePowerMESH™150°C (TJ)
STMicroelectronicsIGBT 600V 30A TO-220TubeTO-220Through HolePowerMESH™150°C (TJ)
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