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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 STGW60H65DRF $2.08 | STMicroelectronics | IGBT TRENCH FS 650V 120A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
STGW60H65F $3.65 | STMicroelectronics | IGBT TRENCH FS 650V 120A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
 STGW60H65FB $4.48 | STMicroelectronics | IGBT TRENCH FS 650V 80A TO-247 | Tube | TO-247 | Through Hole | - | -55°C ~ 175°C (TJ) |
STGW60V60DF $4.62 | STMicroelectronics | IGBT TRENCH FS 600V 80A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
| STMicroelectronics | IGBT BIPO 600V 60A TO247 | Tube | - | - | - | - | |
STGW60V60F $4.34 | STMicroelectronics | IGBT TRENCH FS 600V 80A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
 STGW75H65DFB2-4 $7.43 | STMicroelectronics | IGBT TRENCH FS 650V 115A TO-247 | Tube | TO-247-4 | Through Hole | HB2 | -55°C ~ 175°C (TJ) |
STGW75M65DF2 $6.27 | STMicroelectronics | IGBT TRENCH FS 650V 120A TO-247 | Tube | TO-247-3 | Through Hole | M | -55°C ~ 175°C (TJ) |
