APT5010B2FLLG

Single FETs, MOSFETs Overview

The APT5010B2FLLG is a Power MOS 7® N-Channel enhancement mode power MOSFET in the T-MAX™ [B2] package. It features a Drain-Source Breakdown Voltage (VDSS) of 500V and a Continuous Drain Current (ID) of 46A at TC = 25°C. The Drain-Source On-State Resistance (RDS(on)) is 0.100 Ohms at VGS = 10V and ID = 23A. Total Power Dissipation (PD) is 520W at TC = 25°C with a linear derating factor of 4.0 W/°C. Operating and Storage Junction Temperature Range (TJ,TSTG) spans from -55 to +150°C.

Single FETs, MOSFETs Feature Summary

• Power MOS 7® technology significantly lowers RDS(ON) and Qg for reduced conduction and switching losses.
• Patented metal gate structure enables exceptionally fast switching speeds.
• Features a FAST RECOVERY body diode for efficient reverse recovery performance.
• T-MAX™ [B2] package design provides increased power dissipation capabilities.

Single FETs, MOSFETs Applications

• High voltage power conversion systems
• Inductive switching applications
• Resistive switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required package variant, as B2 denotes the T-MAX™ [B2] form factor. Confirm static and dynamic electrical parameters against the official datasheet before integration. Ensure proper electrostatic discharge handling procedures are followed during assembly due to device sensitivity.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring low on-state resistance and fast switching characteristics. Evaluate thermal management requirements based on the 520W power dissipation rating and junction-to-case thermal impedance. Consider the 500V breakdown voltage and 46A continuous current limits for circuit design margins.

Single FETs, MOSFETs Part Context

This part belongs to the Microchip Technology POWER MOS 7® series, representing a generation of low-loss, high-voltage N-Channel enhancement mode power MOSFETs. The series addresses both conduction and switching losses through optimized RDS(ON) and gate charge reduction.

Single FETs, MOSFETs Replacement Considerations

APT5010LFLL shares identical electrical specifications but utilizes the TO-264 (L) package instead of the T-MAX™ [B2] form factor. Verify mechanical footprint compatibility when substituting between these package variants.

Single FETs, MOSFETs FAQ

What is the maximum repetitive avalanche energy rating?

The single pulse avalanche energy (EAS) rating is 1600 mJ, starting at an initial junction temperature of +25°C.

How does the source-drain diode forward voltage vary with temperature?

At TJ = 25°C, the typical forward voltage is 1.3V at IS = -46A. At TJ = 125°C, it increases to approximately 1.3V under similar conditions, though specific values depend on the operating point.