Single FETs, MOSFETs APT70SM70B product image

APT70SM70B

$11.59
  • Description:SICFET N-CH 700V 65A TO247
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk

SKU:dab78d549d57 Category: Brand:

  
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APT70SM70B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is SICFET N-CH 700V 65A TO247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT70SM70B

  • Description:SICFET N-CH 700V 65A TO247
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss):700 V
  • Current - Continuous Drain (Id) @ 25°C:65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):20V
  • Rds On (Max) @ Id, Vgs:70mOhm @ 32.5A, 20V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:125 nC @ 20 V
  • Vgs (Max):+25V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):300W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247 [B]
  • Package / Case:TO-247-3

Single FETs, MOSFETs datasheet and documents for APT70SM70B

APT70SM70B

Single FETs, MOSFETs Overview

The APT70SM70B is an N-channel Silicon Carbide (SiC) power MOSFET manufactured by Microsemi Corporation. It features a 700 V drain-source voltage rating and supports a continuous drain current of 65 A at case temperature. The device is designed for through-hole mounting in a TO-247 [B] package, offering a power dissipation capacity of 300 W. Key electrical characteristics include a gate charge of 120 nC and an operating temperature range spanning from -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

  • Utilizes silicon carbide material technology for superior performance over traditional silicon solutions
  • Incorporates proprietary passivation technology to maximize SiC benefits
  • Designed for high-temperature operation with extended thermal limits

Single FETs, MOSFETs Applications

  • High-efficiency power conversion systems
  • Industrial motor drives
  • Uninterruptible power supplies (UPS)

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation carefully, as Microsemi's semiconductor assets were acquired by Microchip Technology. Ensure the component matches the specific TO-247 [B] package outline and confirms the 700V/65A ratings against official datasheets before integration into designs.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust high-voltage switching capabilities and reduced switching losses compared to silicon counterparts. Consider the TO-247 [B] form factor for through-hole assembly requirements and verify that the system can accommodate the specified thermal management needs for 300 W dissipation.

Single FETs, MOSFETs Part Context

This discrete power MOSFET belongs to the family of silicon carbide devices offered by Microsemi, now part of Microchip Technology. These components are engineered to address the limitations of conventional silicon in high-power, high-frequency environments, providing enhanced efficiency and thermal stability for demanding electronic applications.

Single FETs, MOSFETs Replacement Considerations

Consult official Microchip or Microsemi documentation for verified cross-reference part numbers. Do not assume functional equivalence with other brands without validating pinouts, voltage ratings, and thermal characteristics against the original specifications.

APT70SM70BAPT70SM70B
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