AUIRFZ48N

Single FETs, MOSFETs Overview

The AUIRFZ48N is a 55V, N-channel automotive-grade power MOSFET from Infineon Technologies. It features a maximum drain-source voltage (VDS) of 55V and a continuous drain current (ID) of 69A at 25°C. The device exhibits a maximum on-resistance (RDS(on)) of 14mΩ at VGS=10V. Key electrical parameters include a gate charge (QG) of 42nC typ at 10V and a gate-drain charge (Qgd) of 17nC. Thermal performance is characterized by a junction-to-case thermal resistance (RthJC) of 0.95 K/W. The component supports a maximum junction temperature (Tj) of 175°C and operates within a temperature range of -55°C to 175°C. It utilizes the 7th Generation HEXFET technology and is housed in a TO-220 package with through-hole mounting.

Single FETs, MOSFETs Feature Summary

• Automotive qualified reliability for demanding vehicle environments
• Advanced 7th Generation HEXFET process technology for optimized switching and conduction losses
• High thermal stability supporting operation up to 175°C junction temperature
• Robust avalanche capability for handling transient energy events

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• DC-DC converter circuits in vehicles
• Motor control applications requiring high efficiency
• General purpose power switching in automotive electronics

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet version and revision date when sourcing, as Infineon may update documentation over time. Confirm that the component meets the required automotive quality standards for your specific application environment. Ensure compatibility with the TO-220 through-hole mounting method during PCB design. Check for any lead-free or RoHS compliance markings if environmental regulations apply to your assembly process.

Single FETs, MOSFETs Selection Notes

Select this component when a 55V N-channel MOSFET with low on-resistance is required for automotive applications. The 14mΩ RDS(on) offers efficient power handling compared to standard industrial equivalents. Consider the 69A current rating and 175°C thermal limit for high-power density designs. The TO-220 package facilitates heat sinking for high-current scenarios. Verify gate drive requirements align with the specified threshold voltages for reliable switching.

Single FETs, MOSFETs Part Context

The AUIRFZ48N belongs to Infineon's family of automotive-grade HEXFET power MOSFETs. It represents the 7th generation of this technology, offering improvements in switching speed and conduction loss over previous iterations. This part is designed specifically for the automotive sector, ensuring durability under vibration and extreme temperature conditions typical in vehicle operations.

Single FETs, MOSFETs Replacement Considerations

Direct replacements should be sought from the same manufacturer's automotive MOSFET lineup. Verify pinout compatibility with the TO-220 package. Ensure substitute parts meet or exceed the 55V VDS and 14mΩ RDS(on) specifications. Cross-reference with other 7th generation devices if higher current ratings are needed.