IRFH5215TR2PBF

$2.30

Description：MOSFET N-CH 150V 5.0A PQFN
Series：-
Mfr：Infineon Technologies
Package：Cut Tape (CT)

SKU:19d302504828 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFH5215TR2PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 150V 5.0A PQFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFH5215TR2PBF

Description：MOSFET N-CH 150V 5.0A PQFN
Series：-
Mfr：Infineon Technologies
Package：Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：5A (Ta), 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：58mOhm @ 16A, 10V
Vgs(th) (Max) @ Id：5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：32 nC @ 10 V
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：1350 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PQFN (5x6)
Package / Case：8-VQFN Exposed Pad

Single FETs, MOSFETs datasheet and documents for IRFH5215TR2PBF

IRFH5215TR2PBF

Single FETs, MOSFETs Overview

The IRFH5215TR2PBF is a single N-channel HEXFET power MOSFET housed in a PQFN 5x6 mm package. It features a drain-to-source voltage of 150 V and a maximum continuous drain current of 27 A at 25°C case temperature. The device exhibits a maximum on-resistance of 58 mΩ at VGS = 10V, with a typical total gate charge of 21 nC. Thermal performance includes a junction-to-case thermal resistance of 1.2 °C/W (bottom) and a maximum operating junction temperature of 150 °C.

Single FETs, MOSFETs Feature Summary

Low profile design under 0.9 mm height for increased power density
Industry-standard pinout ensuring multi-vendor compatibility
Compatible with existing surface mount manufacturing techniques
Industrial qualification level with MSL1 moisture sensitivity

Single FETs, MOSFETs Applications

Primary side synchronous rectification
Inverters for DC motors
DC-DC brick applications
Boost converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TR2PBF against official documentation to confirm it corresponds to the mini-reel format containing 400 units per reel. Confirm that this variant is subject to End-of-Life notice #259 as indicated in the datasheet revision history. Ensure procurement channels provide valid traceability and authenticity guarantees before finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 150 V rating and low on-resistance are required within a compact PQFN footprint. Consider the 27 A current capability relative to the thermal management strategy, specifically utilizing the bottom-side exposed pad for heat dissipation. Verify that the gate threshold voltage range aligns with the intended driver logic levels for reliable switching operation.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes silicon technology and is designed for high-efficiency switching applications. The PQFN 5x6 package provides a robust solution for surface-mount assembly while maintaining electrical isolation and thermal conductivity through the substrate.