Diode Arrays LXA08T600C product image

LXA08T600C

$0.56
  • Description:DIODE ARR SCHOTT 600V 4A TO220AB
  • Series:Qspeed™

SKU:95fe96a467e9 Category: Brand:

  
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LXA08T600C is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Power Integrations. Its product description is DIODE ARR SCHOTT 600V 4A TO220AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for LXA08T600C

  • Description:DIODE ARR SCHOTT 600V 4A TO220AB
  • Series:Qspeed™
  • Mfr:Power Integrations
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):600 V
  • Current - Average Rectified (Io) (per Diode):4A
  • Voltage - Forward (Vf) (Max) @ If:2.96 V @ 4 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):18.5 ns
  • Current - Reverse Leakage @ Vr:250 µA @ 600 V
  • Operating Temperature - Junction:150°C (Max)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220AB
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for LXA08T600C

LXA08T600C

Diode Arrays Overview

The LXA08T600C is a Qspeed™ X-Series common-cathode diode rated for 600 V peak repetitive reverse voltage. It provides an average forward current of 4 A per diode and 8 A per device, with a maximum junction temperature of 150 °C. The component features low reverse recovery charge (QRR) of 50 nC at 125 °C and softness (tb/ta) of 0.8. Packaged in TO-220AB, it supports high dI/dt switching up to 1000 A/µs.

Diode Arrays Feature Summary

  • Low reverse recovery charge and current for enhanced efficiency
  • Soft recovery waveform reduces electromagnetic interference
  • Capable of handling extremely fast switching speeds

Diode Arrays Applications

  • Power Factor Correction Boost Diode
  • Motor drive circuits
  • DC-AC inverters

Diode Arrays Procurement Notes

Verify the specific ordering suffix 'C' against official Power Integrations documentation to confirm compliance with lead-free plating, green mold compound, and halogen-free requirements per IEC 61249-2-21 standards. Ensure thermal management design accounts for the specified junction-to-case resistance values provided in the datasheet.

Diode Arrays Selection Notes

Select this component for applications requiring low EMI and snubber elimination due to its soft recovery characteristics. Evaluate thermal derating curves based on case temperature constraints. Confirm that the 600 V rating and 8 A total current capacity align with the circuit's peak repetitive reverse voltage and average forward current demands.

Diode Arrays Part Context

This device belongs to the Qspeed family from Power Integrations, designed to minimize reverse recovery losses. It utilizes silicon technology optimized for high-frequency operation, offering lower QRR compared to standard 600 V silicon diodes to improve overall system performance.

Diode Arrays Replacement Considerations

Consult official manufacturer substitution lists for verified equivalents. Generic replacements may not match the specific soft recovery profile or QRR specifications required for snubberless designs.

Diode Arrays FAQ

What is the typical reverse recovery charge (QRR) at 125 °C?

The typical QRR at 125 °C is 50 nC.

Does the LXA08T600C require external snubber circuits?

No, its soft recovery characteristics are designed to eliminate the need for snubber circuits.

What is the maximum non-repetitive peak surge current?

The maximum non-repetitive peak surge current is 350 A for a half-cycle sinusoid at TC = 25 °C.

LXA08T600CLXA08T600C
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