MSS30-242-B20

Description：RF DIODE SCHOTTKY 2V 100MW B20
Series：-

SKU:d17da00209e6 Category: RF Diodes Brand: MACOM Technology Solutions

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Product introduction

MSS30-242-B20 is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE SCHOTTKY 2V 100MW B20. Review the specifications below when checking this part for your BOM.

RF Diode specifications for MSS30-242-B20

Description：RF DIODE SCHOTTKY 2V 100MW B20
Series：-
Mfr：MACOM Technology Solutions
Package：Tray
Diode Type：Schottky - 1 Pair Series Connection
Voltage - Peak Reverse (Max)：2V
Current - Max：50 mA
Capacitance @ Vr, F：0.1pF @ 0V, 1MHz
Resistance @ If, F：13Ohm @ 5mA, 1MHz
Power Dissipation (Max)：100 mW
Operating Temperature：-65°C ~ 150°C
Package / Case：B20
Supplier Device Package：B20
Grade：-
Qualification：-

RF Diode datasheet and documents for MSS30-242-B20

MSS30-242-B20

RF Diode Overview

The MSS30-242-B20 is a low barrier silicon Schottky diode manufactured by MACOM Technology Solutions. It features a beam lead package and is designed for high-frequency applications up to 175 GHz. Key electrical parameters include a breakdown voltage (Vb) of 2.0 V, a forward voltage (Vf) of 0.29 V, and a total capacitance of 0.07 pF. The device utilizes a series tee configuration with a B20 suffix designation.

RF Diode Feature Summary

Low barrier silicon Schottky diode construction
Beam lead package design for high-frequency performance
Series tee configuration for RF applications

RF Diode Applications

High-frequency rectification
Mixing circuits
Detection applications

RF Diode Procurement Notes

Verify the specific datasheet version and manufacturer documentation to confirm electrical characteristics and mechanical dimensions. Ensure compatibility with high-frequency circuit designs requiring low capacitance and fast switching speeds. Check RoHS compliance status as indicated in official product specifications.

RF Diode Selection Notes

Select this component for applications requiring operation at frequencies up to 175 GHz. Consider the low forward voltage and minimal capacitance for efficient signal processing. Evaluate the beam lead package suitability for the intended PCB layout and mounting requirements.

RF Diode Part Context

This part belongs to MACOM's MSS30 series of low barrier silicon Schottky diodes. These components are engineered for millimeter-wave applications where low noise and high speed are critical. The series offers various breakdown voltage options to suit different circuit biasing needs.