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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
MIP35R12P3STN-BPView Product
GT50JR22(STA1,E,S)View Product
APTGF300A120D3GView Product
IKW75N60H3FKSA1View Product
FF2400RB12IP7BPSA1View Product
APT64GA90BView Product
FP15R12W2T4BOMA1View Product
GPA040A120L-FDView Product
APT30GT60BRDQ2GView Product
IXA40RG1200DHG-TUBView Product
IXA20PG1200DHG-TRRView Product
AOMU66464QView Product
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