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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
MWI100-12A8TView Product
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SIGC81T60NCX7SA2View ProductIXA40RG1200DHG-TUBView Product
FP75R12N2T7PB11BPSA1View ProductFII24N170AH1View Product
6MS24017E33W32859NOSA1View Product
IXGT15N120BView Product
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