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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT TRENCH FS 1200V 30A TO-247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT 1200V 15A TO247-3Bulk,Tube--*-
onsemiIGBT 1200V 30A TO-247-3TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT TRENCH FS 1200V 30A TO-247Bulk,Tube,TubeTO-247-3Through Hole--40°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 1200V 30A TO-247TubeTO-247-3Through Hole--40°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 1200V 30A TO-247Tube,TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT TRENCH FS 1350V 30A TO-247Bulk,Tube,TubeTO-247-3Through Hole--40°C ~ 175°C (TJ)
onsemiIGBT NPT 600V 30A TO-220ABTubeTO-220ABThrough Hole--55°C ~ 150°C (TJ)
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