IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select products	Mfr	Description	Package	Supplier Device Package	Mounting Type	Series	Operating Temperature
NGTB15N60R2FG	onsemi	IGBT 600V 24A TO-220F-3FS	Tube	TO-220F-3FS	Through Hole	-	175°C (TJ)
NGTB15N60S1EG	onsemi	IGBT NPT 600V 30A TO-220AB	Tube	TO-220AB	Through Hole	-	-55°C ~ 150°C (TJ)
NGTB20N120IHLWG	onsemi	IGBT 1200V 40A TO-247-3	Tube	TO-247-3	Through Hole	-	-55°C ~ 150°C (TJ)
NGTB20N120IHRWG	onsemi	IGBT TRENCH FS 1200V 40A TO-247	Tube	TO-247	Through Hole	-	-40°C ~ 175°C (TJ)
NGTB20N120IHSWG	onsemi	IGBT TRENCH FS 1200V 40A TO-247	Tube	TO-247-3	Through Hole	-	-55°C ~ 150°C (TJ)
NGTB20N120IHTG $3.11	onsemi	IGBT 1200V 20A TO247	Tube	-	-	-	-
NGTB20N120IHWG $2.04	onsemi	IGBT TRENCH FS 1200V 40A TO-247	Tube,Tube	TO-247-3	Through Hole	-	-40°C ~ 175°C (TJ)
NGTB20N120LWG	onsemi	IGBT TRENCH FS 1200V 40A TO-247	Tube	TO-247-3	Through Hole	-	-55°C ~ 150°C (TJ)