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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| onsemi | IGBT TRENCH 1400V 60A TO-247-3 | Bulk | TO-247-3 | Through Hole | - | -40°C ~ 175°C (TJ) | |
| onsemi | IGBT TRENCH FS 600V 60A TO-247 | Tube | TO-247 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() NGTB30N60FWG $2.27 | onsemi | IGBT TRENCH 600V 60A TO-247-3 | Tube,Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() NGTB30N60IHLWG $1.99 | onsemi | IGBT TRENCH FS 600V 60A TO-247-3 | Tube,Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT 600V 100A TO-247-3 | Tube | TO-247-3 | Through Hole | - | 175°C (TJ) | |
![]() NGTB30N60SWG $2.01 | onsemi | IGBT TRENCH FS 600V 60A TO-247-3 | Tube,Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() NGTB30N65IHL2WG $3.38 | onsemi | IGBT TRENCH FS 650V 60A TO-247-3 | Bulk,Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() NGTB35N60FL2WG $4.78 | onsemi | IGBT TRENCH FS 600V 70A TO-247-3 | Tube,Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |

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