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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
NGTB20N120IHRWGView Product
DDB6U134N16RRB80BPSA1View Product
IXA20PG1200DHG-TRRView Product
NXH240B120H3Q1PG-RView Product
AIGW50N65F5XKSA1View Product
STGWA75H65DFB2View Product
MMIX4B22N300View Product
FZ1500R33HL3BPSA1View Product
IRGP4660DPBFView Product
NGD8205NT4View Product
FII30-12EView Product
PCFMB100W6View Product
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