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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
RGTV80TS65GC11View Product
BSM100GAL120DLCKHOSA1View Product
IXA40PG1200DHG-TRRView Product
FII24N17AH1View Product
AOK60B60D1View Product
IRGC100B120UBView Product
AOD5B65MQ1EView Product
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FP75R12KT4B15BOSA1View Product
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STGWA40H120DF2View Product
VS-GB100YG120NTView Product
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