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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Infineon Technologies | MOSFET N-CH 30V 14A 8SO | Tube | 8-SO | Surface Mount | HEXFET® | -55°C ~ 150°C (TJ) | |
![]() 94-3449 $1.08 | Infineon Technologies | MOSFET 2P-CH 55V 3.4A 8SO | Tube | 8-SO | Surface Mount | HEXFET® | -55°C ~ 150°C (TJ) |
| Infineon Technologies | MOSFET N-CH 100V 4.5A 8SO | Tube | 8-SO | Surface Mount | - | - | |
![]() 94-4007 $1.33 | Infineon Technologies | MOSFET N-CH 30V 35A DPAK | Tube | TO-252AA (DPAK) | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) |
| Infineon Technologies | MOSFET N-CH 20V 75A DPAK | Tube | TO-252AA (DPAK) | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | IC MOSFET | Tube | - | - | - | - | |
![]() 94-4582 $1.28 | Infineon Technologies | MOSFET P-CH 55V 31A D2PAK | Tube | D2PAK | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) |
![]() 94-4737 $1.00 | Infineon Technologies | MOSFET N-CH 30V 33A DPAK | Tube | TO-252AA (DPAK) | Surface Mount | HEXFET® | -55°C ~ 150°C (TJ) |

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