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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() 94-2110 $2.29 | Infineon Technologies | MOSFET N-CH 40V 162A D2PAK | Tube | D2PAK | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) |
![]() 94-2113 $2.86 | Infineon Technologies | MOSFET N-CH 30V 116A D2PAK | Tube | D2PAK | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) |
| Infineon Technologies | MOSFET P-CH 150V 13A D2PAK | Tube | - | - | * | - | |
| Infineon Technologies | MOSFET N-CH 30V 116A TO220AB | Tube | TO-220AB | Through Hole | HEXFET® | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | MOSFET N-CH 100V 17A D2PAK | Tube | D2PAK | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | MOSFET N-CH 100V 36A D2PAK | Tube | - | - | * | - | |
![]() 94-2335 $1.13 | Infineon Technologies | MOSFET N-CH 55V 28A DPAK | Tube | TO-252AA (DPAK) | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) |
| Infineon Technologies | MOSFET N-CH 100V TO-220AB | Tube | - | - | - | - |

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