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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FP15R12KE3GBOSA1 $42.73 | Infineon Technologies | FP15R12KE3G - 1200 V, 15 A PIM T | Bulk | - | - | * | - |
![]() FP15R12KE3GBPSA1 $60.00 | Infineon Technologies | LOW POWER ECONO AG-ECONO2C-311 | Tray | AG-ECONO2C | Chassis Mount | EconoPIM™ 2 | -40°C ~ 125°C (TJ) |
![]() FP15R12KS4CBOSA1 $72.04 | Infineon Technologies | FP15R12KS4C - 1200 V, 15 A PIM T | Bulk | - | - | * | - |
![]() FP15R12KT3BOSA1 $40.92 | Infineon Technologies | LOW POWER ECONO | Bulk | - | - | * | - |
![]() FP15R12KT3BPSA1 $60.05 | Infineon Technologies | LOW POWER ECONO AG-ECONO2C-311 | Tray | AG-ECONO2C | Chassis Mount | - | -40°C ~ 125°C (TJ) |
![]() FP15R12W1T4B11BOMA1 $31.72 | Infineon Technologies | IGBT MOD 1200V 28A 130W | Tray | Module | Chassis Mount | - | -40°C ~ 150°C |
![]() FP15R12W1T4B3BOMA1 $31.37 | Infineon Technologies | IGBT MOD 1200V 28A 130W | Tray | Module | Chassis Mount | EasyPIM™ | -40°C ~ 150°C |
![]() FP15R12W1T4BOMA1 $33.53 | Infineon Technologies | IGBT MOD 1200V 28A 130W | Tray | Module | Chassis Mount | EasyPIM™ | -40°C ~ 150°C |
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