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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon Technologies1200 V, 15 A PIM IGBT MODULEBulk--*-
Infineon TechnologiesIGBT MOD 1200V 30A 20MWTrayModuleChassis MountEasyPIM™-40°C ~ 150°C
Infineon TechnologiesIGBT MODULE LOW POWER EASYBulk,TrayAG-EASY1B-2Chassis MountTRENCHSTOP™175°C (TJ)
Infineon TechnologiesIGBT MODULE LOW POWER EASYBulk,TrayAG-EASY1B-2Chassis MountTRENCHSTOP™175°C (TJ)
Infineon TechnologiesLOW POWER EASY AG-EASY1B-1TrayAG-EASY1B-2Chassis MountEasyPIM™-40°C ~ 175°C (TJ)
Infineon TechnologiesLOW POWER EASY AG-EASY1B-2Bulk,TrayAG-EASY1BChassis MountEasyPIM™-40°C ~ 175°C (TJ)
Infineon TechnologiesLOW POWER EASYBulk,Tray----
Infineon TechnologiesLOW POWER EASY AG-EASY1B-1TrayAG-EASY1BChassis MountEasyPIM™, TRENCHSTOP™-40°C ~ 175°C (TJ)
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