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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesLOW POWER EASYTrayAG-EASY2B-2Chassis MountEasyPIM™-40°C ~ 175°C (TJ)
Infineon TechnologiesLOW POWER EASY AG-EASY2B-711TrayAG-EASY1B-2Chassis MountEasyPIM™-40°C ~ 175°C (TJ)
Infineon TechnologiesEASY STANDARDTray----
Infineon TechnologiesLOW POWER EASYTrayAG-EASY2BChassis MountEasyPIM™-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT MOD 1200V 55A 210WBulkModuleChassis MountEconoPIM™ 2-40°C ~ 125°C
Infineon TechnologiesLOW POWER ECONO AG-ECONO2C-311TrayAG-ECONO2CChassis MountSmartPIM1-40°C ~ 125°C (TJ)
Infineon TechnologiesIGBT MOD 1200V 55A 210WTrayModuleChassis MountEconoPIM™ 3-40°C ~ 125°C
Infineon TechnologiesIGBT MOD 1200V 55A 210WBulk,BulkModuleChassis Mount--40°C ~ 125°C
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