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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FP30R06W1E3PBPSA1 $24.76 | Infineon Technologies | LOW POWER EASY AG-EASY1B-311 | Tray | - | - | * | - |
![]() FP30R06YE3B4BOMA1 $68.30 | Infineon Technologies | IGBT MODULE LOW PWR EASY2-1 | Tray | - | - | - | - |
| Infineon Technologies | MODULE IGBT CBI E2 | Tray | - | - | * | - | |
![]() FP35R12KT4B11BOSA1 $59.84 | Infineon Technologies | IGBT MOD 1200V 35A 210W | Bulk | Module | Chassis Mount | EconoPIM™ 2 | -40°C ~ 150°C |
![]() FP35R12KT4B11BPSA1 $63.57 | Infineon Technologies | LOW POWER ECONO AG-ECONO2B-711 | Tray | AG-ECONO2B | Chassis Mount | EconoPIM™ 2 | -40°C ~ 150°C (TJ) |
| Infineon Technologies | IGBT MOD 1200V 35A 210W | Bulk | Module | Chassis Mount | EconoPIM™ 2 | -40°C ~ 150°C | |
![]() FP35R12KT4B15BPSA1 $66.93 | Infineon Technologies | LOW POWER ECONO AG-ECONO2C-211 | Tray | AG-ECONO2C | Chassis Mount | EconoPIM™ 2 | -40°C ~ 150°C (TJ) |
![]() FP35R12KT4B16BOSA1 $73.81 | Infineon Technologies | FP35R12 - IGBT MODULE | Bulk | - | - | * | - |
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