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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesLOW POWER ECONOTray----
Infineon TechnologiesIGBT MOD 1200V 39A 190WTrayModuleChassis MountSmartPIM1-40°C ~ 150°C
Infineon TechnologiesIGBT MODULE 1200V 25A 20MW EASYTrayAG-EASY1B-2Chassis MountEasyPIM™-40°C ~ 175°C
Infineon TechnologiesLOW POWER EASY AG-EASY1B-711TrayAG-EASY1BChassis MountEasyPIM™-40°C ~ 175°C (TJ)
Infineon TechnologiesLOW POWER EASY AG-EASY1B-1TrayAG-EASY1BChassis MountEasyPIM™-40°C ~ 175°C (TJ)
Infineon TechnologiesLOW POWER EASY AG-EASY1B-711TrayAG-EASY1BChassis MountEasyPIM™-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT MOD 1200V 39A 175WTrayModuleChassis Mount--40°C ~ 150°C (TJ)
Infineon TechnologiesFP25R12 - IGBT MODULEBulk--*-
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