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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Watech ElectronicsIGBT 1200V 80A TO-247-3BulkTO-247-3Through Hole--40°C ~ 175°C (TJ)
Watech ElectronicsIGBT FIELD STOP 1200V 82A TO-247BulkTO-247-3Through Hole--40°C ~ 175°C (TJ)
Watech ElectronicsIGBT 650V 90A TO-247-3BulkTO-247-3Through Hole--40°C ~ 175°C (TJ)
Watech ElectronicsIGBT 650V 90A TO-247-3BulkTO-247-3Through Hole--40°C ~ 175°C (TJ)
Watech ElectronicsIGBT 650V 90A TO-247-4BulkTO-247-4Through Hole--40°C ~ 175°C (TJ)
Watech ElectronicsIGBT 650V 90A TO-247-4BulkTO-247-4Through Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 1350V 40A TO247-6TubePG-TO247-6Through HoleTrenchStop™-40°C ~ 150°C (TJ)
Infineon TechnologiesIGBT MODULE 1700V IPM MIPAQP-4Bulk,TrayModule---40°C ~ 65°C (TA)
Add ComparisonUp to 4 can be added

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