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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT 600V 34A TO-220-3TubeTO-220-3Through Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 600V 14A TO-220ABBulkTO-220ABThrough Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 600V 14A TO-220ABBulkTO-220ABThrough Hole--40°C ~ 150°C (TJ)
onsemiIGBT 600V 14A TO-220-3TubeTO-220-3Through Hole--
Watech Electronics1200V 40A IGBT without FRD TO-2Bulk----
Watech ElectronicsIGBT FIELD STOP 650V 200A TO-247BulkTO-247-3Through Hole--40°C ~ 175°C (TJ)
Watech ElectronicsIGBT 1200V 80A TO-247-3BulkTO-247-3Through Hole--40°C ~ 175°C (TJ)
Watech ElectronicsIGBT 1200V 80A TO-247-3BulkTO-247-3Through Hole--40°C ~ 175°C (TJ)
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