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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT 600V 24A TO-220-3TubeTO-220-3Through Hole--40°C ~ 150°C (TJ)
onsemiIGBT 600V 24A TO-220-3Tube,TubeTO-220-3Through Hole--40°C ~ 150°C (TJ)
Harris CorporationIGBT 600V 24A TO-220-3BulkTO-220-3Through Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 400V 15A TO-220BulkTO-220Through Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 400V 15A TO-220BulkTO-220Through Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 500V 15A TO-220BulkTO-220Through Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 500V 15A TO-220BulkTO-220Through Hole--55°C ~ 150°C (TJ)
Harris Corporation20A, 350V, N-CHANNEL IGBTBulk--*-
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