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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| onsemi | IGBT 600V 24A TO-220-3 | Tube | TO-220-3 | Through Hole | - | -40°C ~ 150°C (TJ) | |
![]() HGTP12N60C3D $1.25 | onsemi | IGBT 600V 24A TO-220-3 | Tube,Tube | TO-220-3 | Through Hole | - | -40°C ~ 150°C (TJ) |
![]() HGTP12N60C3R $1.07 | Harris Corporation | IGBT 600V 24A TO-220-3 | Bulk | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGTP15N40C1 $2.68 | Harris Corporation | IGBT 400V 15A TO-220 | Bulk | TO-220 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGTP15N40E1 $1.41 | Harris Corporation | IGBT 400V 15A TO-220 | Bulk | TO-220 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGTP15N50C1 $3.07 | Harris Corporation | IGBT 500V 15A TO-220 | Bulk | TO-220 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGTP15N50E1 $1.41 | Harris Corporation | IGBT 500V 15A TO-220 | Bulk | TO-220 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGTP20N35F3ULR3935 $1.63 | Harris Corporation | 20A, 350V, N-CHANNEL IGBT | Bulk | - | - | * | - |
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