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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() HGTH12N50CID $2.12 | Harris Corporation | 12A, 500V, N CHANNEL IGBT WITH A | Bulk | - | - | * | - |
![]() HGTH20N50C1 $5.79 | Harris Corporation | IGBT 500V 20A TO-218 ISOLATED | Bulk | TO-218 Isolated | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGTH20N50E1 $2.89 | Harris Corporation | IGBT 500V 20A TO-218 ISOLATED | Bulk | TO-218 Isolated | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGTH20N50E1D $2.89 | Harris Corporation | IGBT 500V 20A TO-218 ISOLATED | Bulk | TO-218 Isolated | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGTH20N50EID $2.89 | Harris Corporation | 20A, 500V, N CHANNEL IGBT WITH A | Bulk | - | - | * | - |
| onsemi | IGBT NPT 1200V 35A TO-220-3 | Tube | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() HGTP10N40C1 $1.00 | Harris Corporation | IGBT 400V 10A TO-220-3 | Bulk | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGTP10N40C1D $2.41 | Harris Corporation | IGBT 400V 17.5A TO-220 | Bulk | TO-220 | Through Hole | - | -55°C ~ 150°C (TJ) |
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