IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select products	Mfr	Description	Package	Supplier Device Package	Mounting Type	Series	Operating Temperature
HGTG24N60D1 $7.59	Harris Corporation	IGBT 600V 40A TO-247	Bulk	TO-247	Through Hole	-	-55°C ~ 150°C (TJ)
HGTG24N60D1D $8.84	Harris Corporation	IGBT 600V 40A TO-247	Bulk	TO-247	Through Hole	-	-55°C ~ 150°C (TJ)
HGTG27N120BN	onsemi	IGBT NPT 1200V 72A TO-247-3	Tube	TO-247-3	Through Hole	-	-55°C ~ 150°C (TJ)
HGTG27N60C3DR $5.49	Harris Corporation	IGBT 600V 54A TO-247	Bulk	TO-247	Through Hole	-	-40°C ~ 150°C (TJ)
HGTG27N60C3R $2.67	Harris Corporation	IGBT 600V 54A TO-247	Bulk	TO-247	Through Hole	-	-40°C ~ 150°C (TJ)
HGTG2ON60C3DR $2.73	Harris Corporation	40A, 600V, RUGGED UFS SERIES N C	Bulk	-	-	*	-
HGTG30N60A4	onsemi	IGBT 600V 75A TO-247-3	Tube	TO-247-3	Through Hole	-	-55°C ~ 150°C (TJ)
HGTG30N60A4D	onsemi	IGBT 600V 75A TO-247-3	Tube	TO-247-3	Through Hole	-	-55°C ~ 150°C (TJ)