IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select products	Mfr	Description	Package	Supplier Device Package	Mounting Type	Series	Operating Temperature
HGTG12N60B3 $1.79	onsemi	IGBT 600V 27A TO-247-3	Tube	TO-247-3	Through Hole	-	-55°C ~ 150°C (TJ)
HGTG12N60C3D $4.04	Harris Corporation	IGBT 600V 24A TO-247	Tube	TO-247	Through Hole	-	-40°C ~ 150°C (TJ)
HGTG12N60D1D $5.82	Harris Corporation	IGBT 600V 21A TO-247	Bulk	TO-247	Through Hole	-	-55°C ~ 150°C (TJ)
HGTG12N60DID $2.90	Harris Corporation	24A, 600V, RUGGED, UFS SERIES N	Bulk	-	-	*	-
HGTG15N120C3 $3.67	Harris Corporation	IGBT 1200V 35A TO-247	Bulk	TO-247	Through Hole	-	-55°C ~ 150°C (TJ)
HGTG18N120BN	onsemi	IGBT NPT 1200V 54A TO-247-3	Tube	TO-247-3	Through Hole	-	-55°C ~ 150°C (TJ)
HGTG18N120BND	onsemi	IGBT NPT 1200V 54A TO-247-3	Tube	TO-247-3	Through Hole	-	-55°C ~ 150°C (TJ)
HGTG20N100D2 $7.89	Harris Corporation	IGBT 1000V 34A TO-247	Bulk	TO-247	Through Hole	-	-55°C ~ 150°C (TJ)