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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() HGTG20N50C1D $6.51 | Harris Corporation | IGBT 500V 26A TO-247 | Bulk | TO-247 | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT 600V 70A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| onsemi | IGBT 600V 70A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() HGTG20N60B3 $3.05 | Harris Corporation | IGBT 600V 40A TO-247 | Tube | TO-247 | Through Hole | - | -40°C ~ 150°C (TJ) |
![]() HGTG20N60B3-FS $3.05 | Fairchild Semiconductor | IGBT 600V 40A TO-247 | Bulk | TO-247 | Through Hole | - | -40°C ~ 150°C (TJ) |
![]() HGTG20N60B3D $2.74 | onsemi | IGBT 600V 40A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -40°C ~ 150°C (TJ) |
| onsemi | IGBT 600V 45A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() HGTG20N60C3R $2.08 | Harris Corporation | IGBT 600V 40A TO-247 | Bulk | TO-247 | Through Hole | - | -40°C ~ 150°C (TJ) |
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