IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select products	Mfr	Description	Package	Supplier Device Package	Mounting Type	Series	Operating Temperature
HGTG40N60B3	onsemi	IGBT 600V 70A TO-247-3	Tube	TO-247-3	Through Hole	-	-55°C ~ 150°C (TJ)
HGTG40N60C3 $5.16	Harris Corporation	IGBT 600V 75A TO-247	Bulk	TO-247	Through Hole	-	-55°C ~ 150°C (TJ)
HGTG40N60C3R $7.12	Harris Corporation	IGBT 600V 75A TO-247	Bulk	TO-247	Through Hole	-	-55°C ~ 150°C (TJ)
HGTG5N120BND $3.54	onsemi	IGBT NPT 1200V 21A TO-247-3	Tube	TO-247-3	Through Hole	-	-55°C ~ 150°C (TJ)
HGTG7N60A4 $1.22	onsemi	IGBT 600V 34A TO-247-3	Tube	TO-247-3	Through Hole	-	-55°C ~ 150°C (TJ)
HGTG7N60A4D $1.62	Harris Corporation	IGBT 600V 34A TO-247	Tube	TO-247	Through Hole	-	-55°C ~ 150°C (TJ)
HGTH12N40CID $2.12	Harris Corporation	12A, 400V, N CHANNEL IGBT WITH A	Bulk	-	-	*	-
HGTH12N50C1D $2.12	Harris Corporation	IGBT 500V 12A TO-218 ISOLATED	Bulk	TO-218 Isolated	Through Hole	-	-55°C ~ 150°C (TJ)