IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select products	Mfr	Description	Package	Supplier Device Package	Mounting Type	Series	Operating Temperature
HGTD7N60C3S9A $1.04	Fairchild Semiconductor	IGBT 600V 14A TO-252	Bulk	TO-252 (DPAK)	Surface Mount	-	-40°C ~ 150°C (TJ)
HGTD8P50G1 $1.21	Harris Corporation	IGBT 500V 12A IPAK	Bulk	IPAK	Through Hole	-	-40°C ~ 150°C (TJ)
HGTD8P50G1S $0.67	Harris Corporation	IGBT 500V 12A TO-252AA	Bulk	TO-252AA	Surface Mount	-	-55°C ~ 150°C (TJ)
HGTG10N120BND $4.28	onsemi	IGBT NPT 1200V 35A TO-247-3	Tube	TO-247-3	Through Hole	-	-55°C ~ 150°C (TJ)
HGTG11N120CN $1.87	Fairchild Semiconductor	IGBT NPT 1200V 43A TO-247	Tube	TO-247	Through Hole	-	-55°C ~ 150°C (TJ)
HGTG11N120CND $5.46	onsemi	IGBT NPT 1200V 43A TO-247-3	Tube	TO-247-3	Through Hole	-	-55°C ~ 150°C (TJ)
HGTG12N60A4	onsemi	IGBT 600V 54A TO-247-3	Tube	TO-247-3	Through Hole	-	-55°C ~ 150°C (TJ)
HGTG12N60A4D	onsemi	IGBT 600V 54A TO-247-3	Tube	TO-247-3	Through Hole	-	-55°C ~ 150°C (TJ)