IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select products	Mfr	Description	Package	Supplier Device Package	Mounting Type	Series	Operating Temperature
HGT1S3N60B3S $0.48	Harris Corporation	IGBT 600V 7A TO-263AB	Bulk	TO-263AB	Surface Mount	-	-55°C ~ 150°C (TJ)
HGT1S3N60C3D $0.77	Harris Corporation	IGBT 600V 6A I2PAK	Bulk	I2PAK (TO-262)	Through Hole	-	-40°C ~ 150°C (TJ)
HGT1S3N60C3DS $0.78	Harris Corporation	IGBT 600V 6A TO-263AB	Bulk	TO-263AB	Surface Mount	-	-
HGT1S7N60A4DS	onsemi	IGBT 600V 34A TO-263	Tube	TO-263 (D2PAK)	Surface Mount	-	-55°C ~ 150°C (TJ)
HGT1S7N60B3 $0.83	Harris Corporation	IGBT 600V 14A TO-262	Bulk	TO-262 (I2PAK)	Through Hole	-	-55°C ~ 150°C (TJ)
HGT1S7N60B3D $1.00	Harris Corporation	IGBT 600V 14A TO-262	Bulk	TO-262 (I2PAK)	Through Hole	-	-55°C ~ 150°C (TJ)
HGT1S7N60C3D $0.83	Fairchild Semiconductor	IGBT 600V 14A TO-262	Bulk	TO-262 (I2PAK)	Through Hole	-	-40°C ~ 150°C (TJ)
HGT1S7N60C3DS $1.05	Harris Corporation	IGBT 600V 14A TO-263AB	Bulk	TO-263AB	Surface Mount	-	-