IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select products	Mfr	Description	Package	Supplier Device Package	Mounting Type	Series	Operating Temperature
HGT1S12N60B3 $1.16	Harris Corporation	IGBT 600V 27A TO-262	Bulk	TO-262 (I2PAK)	Through Hole	-	-55°C ~ 150°C (TJ)
HGT1S12N60B3D $1.16	Harris Corporation	IGBT 600V 27A I2PAK	Bulk	I2PAK (TO-262)	Through Hole	-	-55°C ~ 150°C (TJ)
HGT1S12N60B3DS $1.19	Harris Corporation	IGBT 600V 27A TO-263AB	Bulk	TO-263AB	Surface Mount	-	-55°C ~ 150°C (TJ)
HGT1S12N60C3 $1.31	Harris Corporation	IGBT 600V 24A TO-262	Bulk	TO-262 (I2PAK)	Through Hole	-	-40°C ~ 150°C (TJ)
HGT1S12N60C3D $1.13	Harris Corporation	IGBT 600V 24A TO-262	Bulk	TO-262 (I2PAK)	Through Hole	-	-40°C ~ 150°C (TJ)
HGT1S12N60C3DS $1.79	Fairchild Semiconductor	IGBT 600V 24A TO-263AB	Bulk	TO-263AB	Surface Mount	-	-40°C ~ 150°C (TJ)
HGT1S12N60C3R $1.11	Harris Corporation	IGBT 600V 24A I2PAK	Bulk	I2PAK (TO-262)	Through Hole	-	-55°C ~ 150°C (TJ)
HGT1S12N60C3S9AR4501 $1.34	Harris Corporation	27A, 600V, UFS N-CHANNEL IGBT	Bulk	-	-	*	-