IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select products	Mfr	Description	Package	Supplier Device Package	Mounting Type	Series	Operating Temperature
HGT1S14N36G3VLS	onsemi	IGBT 390V 18A TO-263	Tube	TO-263 (D2PAK)	Surface Mount	-	-40°C ~ 175°C (TJ)
HGT1S14N36G3VLT $1.41	Fairchild Semiconductor	IGBT 390V 18A TO-262	Bulk	TO-262 (I2PAK)	Through Hole	-	-40°C ~ 175°C (TJ)
HGT1S14N41G3VLS $1.70	Fairchild Semiconductor	IGBT 445V 25A TO-263AB	Bulk	TO-263AB	Surface Mount	-	-55°C ~ 175°C (TJ)
HGT1S14N41G3VLT $1.62	Fairchild Semiconductor	IGBT	Bulk	-	-	*	-
HGT1S15N120C3 $3.42	Harris Corporation	IGBT 1200V 35A TO-262	Bulk	TO-262 (I2PAK)	Through Hole	-	-55°C ~ 150°C (TJ)
HGT1S15N120C3S $3.42	Harris Corporation	IGBT 1200V 35A TO-263AB	Bulk	TO-263AB	Surface Mount	-	-55°C ~ 150°C (TJ)
HGT1S20N35F3VLR4505 $1.50	Harris Corporation	40A, 350V, UFS N-CHANNEL IGBT	Bulk	-	-	*	-
HGT1S20N35G3VLS	onsemi	IGBT 375V 20A TO-263	Tube	TO-263 (D2PAK)	Surface Mount	-	-40°C ~ 175°C (TJ)