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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Harris CorporationIGBT 600V 14A TO-263ABBulkTO-263ABSurface Mount--
Harris CorporationIGBT 60A, 600V, N CHANNEL, TO 26Bulk--*-
Harris CorporationIGBT 60A, 600V, N CHANNEL, TO 26Bulk--*-
Harris CorporationIGBT 600V 50A TO-218-5BulkTO-218-5Through Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 600V 12A TO-220-5BulkTO-220-5Through Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 400V 12A TO-252BulkTO-252 (DPAK)Surface Mount--55°C ~ 150°C (TJ)
Harris CorporationIGBT 500V 12A IPAKBulkIPAKThrough Hole--55°C ~ 150°C (TJ)
onsemiIGBT NPT 1200V 5.3A TO-252AATape & Reel (TR),Cut Tape (CT)TO-252AASurface Mount--55°C ~ 150°C (TJ)
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