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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Fairchild SemiconductorIGBT 395V 37.7A TO-262TubeTO-262 (I2PAK)Through Hole--40°C ~ 175°C (TJ)
Fairchild SemiconductorIGBT 415V 37.7A TO-263ABBulkTO-263ABSurface Mount--40°C ~ 175°C (TJ)
onsemiIGBT 600V 70A TO-263TubeTO-263 (D2PAK)Surface Mount--55°C ~ 150°C (TJ)
Harris CorporationIGBT 600V 40A TO-263ABBulkTO-263ABSurface Mount--
Harris CorporationIGBT 600V 40A TO-262BulkTO-262 (I2PAK)Through Hole--40°C ~ 150°C (TJ)
onsemiIGBT 600V 45A TO-263Tape & Reel (TR)TO-263 (D2PAK)Surface Mount--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT NPT 1200V 13A TO-262TubeTO-262Through Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT 600V 17A TO-263TubeTO-263 (D2PAK)Surface Mount--55°C ~ 150°C (TJ)
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