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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() HGT1S20N36G3VL $1.73 | Fairchild Semiconductor | IGBT 395V 37.7A TO-262 | Tube | TO-262 (I2PAK) | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() HGT1S20N36G3VLS $1.73 | Fairchild Semiconductor | IGBT 415V 37.7A TO-263AB | Bulk | TO-263AB | Surface Mount | - | -40°C ~ 175°C (TJ) |
| onsemi | IGBT 600V 70A TO-263 | Tube | TO-263 (D2PAK) | Surface Mount | - | -55°C ~ 150°C (TJ) | |
![]() HGT1S20N60B3S $2.57 | Harris Corporation | IGBT 600V 40A TO-263AB | Bulk | TO-263AB | Surface Mount | - | - |
![]() HGT1S20N60C3R $1.65 | Harris Corporation | IGBT 600V 40A TO-262 | Bulk | TO-262 (I2PAK) | Through Hole | - | -40°C ~ 150°C (TJ) |
| onsemi | IGBT 600V 45A TO-263 | Tape & Reel (TR) | TO-263 (D2PAK) | Surface Mount | - | -55°C ~ 150°C (TJ) | |
![]() HGT1S2N120CN $1.73 | Fairchild Semiconductor | IGBT NPT 1200V 13A TO-262 | Tube | TO-262 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGT1S3N60A4DS9A $1.53 | Fairchild Semiconductor | IGBT 600V 17A TO-263 | Tube | TO-263 (D2PAK) | Surface Mount | - | -55°C ~ 150°C (TJ) |
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