IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select products	Mfr	Description	Package	Supplier Device Package	Mounting Type	Series	Operating Temperature
HGTP3N60B3R4724 $0.44	Harris Corporation	7A, 600V, UFS N-CHANNEL IGBT	Bulk	-	-	*	-
HGTP3N60C3 $0.44	Harris Corporation	IGBT 600V 6A TO-220AB	Bulk	TO-220AB	Through Hole	-	-40°C ~ 150°C (TJ)
HGTP5N120BND	onsemi	IGBT NPT 1200V 21A TO-220-3	Tube	TO-220-3	Through Hole	-	-55°C ~ 150°C (TJ)
HGTP6N40E1D $0.60	Harris Corporation	IGBT 400V 7.5A TO-220	Bulk	TO-220	Through Hole	-	-55°C ~ 150°C (TJ)
HGTP6N40EID $0.60	Harris Corporation	7.5A, 400V, N-CHANNEL IGBT	Bulk	-	-	*	-
HGTP7N60A4	onsemi	IGBT 600V 34A TO-220-3	Tube	TO-220-3	Through Hole	-	-55°C ~ 150°C (TJ)
HGTP7N60A4-F102	onsemi	IGBT 600V 34A TO-220-3	Tube	TO-220-3	Through Hole	-	-55°C ~ 150°C (TJ)
HGTP7N60A4_NL $0.51	Fairchild Semiconductor	IGBT 600V 34A TO-220-3	Bulk	TO-220-3	Through Hole	-	-55°C ~ 150°C (TJ)