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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IFS150B12N3E4PB11BPSA1 $114.78 | Infineon Technologies | IGBT MOD 1200V 300A 750W | Tray | Module | Chassis Mount | MIPAQ™ | -40°C ~ 150°C |
![]() IFS150B12N3E4PB50BPSA1 $114.59 | Infineon Technologies | IGBT MODULE LOW PWR ECONO | Tray | - | - | - | - |
![]() IFS150B17N3E4PB11BPSA1 $116.31 | Infineon Technologies | IGBT MOD 1700V 300A 20MW | Tray | Module | Chassis Mount | MIPAQ™ | -40°C ~ 150°C |
![]() IFS200B12N3E4B31BPSA1 $120.73 | Infineon Technologies | IGBT MOD 1200V 400A 940W | Tray | Module | Chassis Mount | MIPAQ™ | -40°C ~ 150°C |
![]() IFS200B12N3E4B37BPSA1 $114.95 | Infineon Technologies | LOW POWER ECONO AG-ECONO3B-411 | Tray | AG-ECONO3B | Chassis Mount | MIPAQ™ | -40°C ~ 150°C (TJ) |
![]() IFS75B12N3E4B31BOSA1 $71.06 | Infineon Technologies | IGBT MOD 1200V 150A 385W | Tray | Module | Chassis Mount | MIPAQ™ | -40°C ~ 150°C |
![]() IFS75S12N3T4_B11 $83.95 | Infineon Technologies | TRANSISTOR IGBT MODULE | Bulk | - | - | * | - |
![]() IFT150B12N3E4BOSA1 $143.19 | Infineon Technologies | MOD IGBT LOW PWR ECONO | Tray | - | - | MIPAQ™ | - |
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