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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() AIMZA75R140M1HXKSA1 $5.46 | Infineon Technologies | IGBT | Tube | PG-TO247-4 | Through Hole | CoolSiC™ | -55°C ~ 175°C (TJ) |
![]() AIMZH120R010M1TXKSA1 $38.43 | Infineon Technologies | SIC_DISCRETE | Tube | PG-TO247-4-11 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() AIMZH120R020M1TXKSA1 $21.01 | Infineon Technologies | SIC_DISCRETE | Tube | PG-TO247-4-11 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() AIMZH120R030M1TXKSA1 $16.00 | Infineon Technologies | SIC_DISCRETE | Tube | PG-TO247-4-11 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() AIMZH120R040M1TXKSA1 $13.19 | Infineon Technologies | SIC_DISCRETE | Tube | PG-TO247-4-11 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() AIMZH120R060M1TXKSA1 $10.67 | Infineon Technologies | SIC_DISCRETE | Tube | PG-TO247-4-11 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() AIMZH120R080M1TXKSA1 $9.41 | Infineon Technologies | SIC_DISCRETE | Tube | PG-TO247-4-11 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() AIMZH120R120M1TXKSA1 $8.08 | Infineon Technologies | SIC_DISCRETE | Tube | PG-TO247-4-11 | Through Hole | - | -55°C ~ 175°C (TJ) |

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