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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesLOW POWER ECONOTrayAG-ECONO2BChassis MountEconoPIM™ 2-40°C ~ 175°C (TJ)
Infineon TechnologiesLOW POWER ECONOTrayAG-ECONO2BChassis MountEconoPIM™ 2-40°C ~ 175°C (TJ)
Infineon Technologies1200 V, 50 A PIM IGBT MODULETrayAG-ECONO2BChassis MountEconoPIM™ 2, TRENCHSTOP™-40°C ~ 175°C (TJ)
Infineon TechnologiesLOW POWER EASYTrayAG-EASY2B-2Chassis MountEasyPIM™-40°C ~ 175°C (TJ)
Infineon TechnologiesLOW POWER EASY AG-EASY2B-711TrayAG-EASY2BChassis MountEasyPIM™-40°C ~ 175°C (TJ)
Infineon TechnologiesLOW POWER EASY AG-EASY2B-2TrayAG-EASY2BChassis MountEasyPIM™-40°C ~ 175°C (TJ)
Infineon TechnologiesLOW POWER EASYTrayAG-EASY2BChassis MountEasyPIM™-40°C ~ 175°C (TJ)
Infineon TechnologiesLOW POWER EASY AG-EASY3B-1TrayModuleChassis MountEasyPIM™-40°C ~ 175°C (TJ)
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