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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT MOD 1200V 75A 385WBulk,TrayModuleChassis Mount--40°C ~ 150°C (TJ)
Infineon TechnologiesIGBT MOD 1200V 75A 385WBulk,TrayModuleChassis MountEconoPIM™ 3-40°C ~ 150°C
Infineon TechnologiesFP75R12 - IGBT MODULEBulk--*-
Infineon TechnologiesFP75R12 - IGBT MODULEBulk--*-
Infineon TechnologiesIGBT MOD 1200V 150A 20MWBulk,TrayModuleChassis MountEconoPIM™ 3-40°C ~ 150°C
Infineon TechnologiesIGBT MOD 1200V 150A 20MWTrayModuleChassis MountEconoPIM™ 3-40°C ~ 150°C
Infineon TechnologiesIGBT MODULE LOW POWER ECONOBulk,Tray--EconoPIM™ 2-
Infineon TechnologiesLOW POWER ECONO AG-ECONO2B-411TrayAG-ECONO2BChassis MountEconoPIM™ 2-40°C ~ 150°C (TJ)
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