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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesLOW POWER ECONOTrayAG-ECONO3Chassis MountEconoPIM™3-40°C ~ 175°C (TJ)
Infineon TechnologiesLOW POWER EASY AG-EASY3B-1Tray--*-
Infineon TechnologiesIGBT MOD 1700V 150A 20MWBulk,TrayModuleChassis MountEconoPIM™ 3-40°C ~ 150°C
Infineon TechnologiesLOW POWER ECONOTrayAG-ECONO3Chassis MountEconoPIM™3-40°C ~ 150°C (TJ)
Infineon TechnologiesIGBT MOD 1700V 125A 555WBulk,BulkModuleChassis MountEconoPIM™ 3-40°C ~ 150°C
Infineon TechnologiesLOW POWER ECONO AG-ECONO3B-411TrayAG-ECONO3Chassis MountEconoPIM™ 3-40°C ~ 150°C (TJ)
Infineon TechnologiesLOW POWER ECONOTrayAG-ECONO3Chassis MountEconoPIM™3-40°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT, 100A, 600V, N-CHANNELTubeEPM7Chassis MountPower-SPM™-40°C ~ 125°C (TJ)
Add ComparisonUp to 4 can be added

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