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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesLOW POWER ECONOTrayAG-ECONO2BChassis MountTRENCHSTOP™-40°C ~ 175°C (TJ)
Infineon TechnologiesLOW POWER ECONO AG-ECONO2B-711TrayAG-ECONO2BChassis MountEconoPIM™ 2-40°C ~ 175°C (TJ)
Infineon TechnologiesLOW POWER ECONOTrayAG-ECONO2BChassis MountEconoPIM™ 2-40°C ~ 175°C (TJ)
Infineon TechnologiesLOW POWER ECONOTrayAG-ECONO2BChassis MountEconoPIM™ 2-40°C ~ 175°C (TJ)
Infineon TechnologiesLOW POWER ECONO AG-ECONO3-386Tray--*-
Infineon TechnologiesLOW POWER ECONOTray----
Infineon TechnologiesLOW POWER ECONOTrayAG-ECONO3Chassis MountEconoPIM™3-40°C ~ 175°C (TJ)
Infineon TechnologiesLOW POWER ECONO AG-ECONO3B-731Tray--*-
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