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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Fairchild SemiconductorIGBTTubeEPM7Chassis MountPower-SPM™-40°C ~ 125°C (TJ)
Fairchild SemiconductorIGBTTubeEPM7Chassis MountPower-SPM™-40°C ~ 125°C (TJ)
onsemiIGBT MODULE 620V 39A 231W F1TrayF1Chassis Mount--40°C ~ 150°C (TJ)
Fairchild SemiconductorPIM F2 PV 650V 40ABulk--*-
Fairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTOBulkF2Chassis Mount--40°C ~ 150°C (TJ)
Fairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTOBulkF2Through Hole--40°C ~ 150°C (TJ)
onsemiIGBT MODULE 650V 40A 156W F2Bulk,Tray,TrayF2Through Hole--40°C ~ 150°C (TJ)
Infineon TechnologiesIGBT MODULE PP IHM I XHP 1 7KVBulk,TrayAG-PRIME3-1Chassis MountEconoPACK™ 2-40°C ~ 150°C (TJ)
Add ComparisonUp to 4 can be added

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