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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FP7G50US60 $22.70 | Fairchild Semiconductor | IGBT | Tube | EPM7 | Chassis Mount | Power-SPM™ | -40°C ~ 125°C (TJ) |
![]() FP7G75US60 $25.78 | Fairchild Semiconductor | IGBT | Tube | EPM7 | Chassis Mount | Power-SPM™ | -40°C ~ 125°C (TJ) |
| onsemi | IGBT MODULE 620V 39A 231W F1 | Tray | F1 | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
![]() FPF2C110BI07AS2 $67.69 | Fairchild Semiconductor | PIM F2 PV 650V 40A | Bulk | - | - | * | - |
![]() FPF2C8P2NL07A $65.41 | Fairchild Semiconductor | INSULATED GATE BIPOLAR TRANSISTO | Bulk | F2 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() FPF2G120BF07AS $82.84 | Fairchild Semiconductor | INSULATED GATE BIPOLAR TRANSISTO | Bulk | F2 | Through Hole | - | -40°C ~ 150°C (TJ) |
![]() FPF2G120BF07ASP $81.80 | onsemi | IGBT MODULE 650V 40A 156W F2 | Bulk,Tray,Tray | F2 | Through Hole | - | -40°C ~ 150°C (TJ) |
![]() FR900R12IP4DBPSA1 $925.71 | Infineon Technologies | IGBT MODULE PP IHM I XHP 1 7KV | Bulk,Tray | AG-PRIME3-1 | Chassis Mount | EconoPACK™ 2 | -40°C ~ 150°C (TJ) |
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