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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Infineon Technologies | IGBT MODULE 600V 20A 81W | Tray | Module | Chassis Mount | - | -40°C ~ 125°C | |
| Infineon Technologies | IGBT MODULE 1200V 24A 86W | Tray | Module | Chassis Mount | - | -40°C ~ 125°C | |
| Infineon Technologies | IGBT MOD 1200V 25A 110W | Tray | Module | Chassis Mount | - | -40°C ~ 125°C | |
![]() FS200R06KE3BOSA1 $92.37 | Infineon Technologies | IGBT MOD 600V 200A 600W | Tray | Module | Chassis Mount | EconoPACK™ 3 | -40°C ~ 150°C |
| Infineon Technologies | IGBT MODULE HYBRID 28MDIP | Tray | PG-MDIP-28 | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
![]() FS200R07A02E3S6BKSA3 $83.60 | Infineon Technologies | HYBRID PACK DSC SI | Tube | PG-MDIP-28 | Chassis Mount | HybridPACK™ | -40°C ~ 150°C (TJ) |
| Infineon Technologies | MODULE IGBT HYBRID PK | Tray | AG-HYBRID1-1 | Chassis Mount | HybridPACK™1 | -40°C ~ 150°C (TJ) | |
![]() FS200R07A1E3BOSA1 $213.83 | Infineon Technologies | IGBT MOD 650V 250A 790W | Tray | Module | Chassis Mount | - | -40°C ~ 150°C (TJ) |
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